silicon power npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5977 issue 2 page 1 of 3 BUL54A-TO5 advanced distributed base design high voltage fast switching high energy rating screening options available features: features: features: features: multi?base for efficient energy distribution across the chip resulting in significantly improved switc hing and energy ratings across full temperature range. ion implant and high accuracy masking for tight con trol of characteristics from batch to batch. triple guard rings for improved control of high vol tages. absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage (i e = 0) 1000v v ceo collector ? emitter voltage (i b = 0) 500v v ebo emitter ? base voltage (i c = 0) 10v i c continuous collector current 4a p tot total power dissipation at t c = 25c 20w t j operating junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters max units r jc thermal resistance, junction to case 6.25 c/w
silicon power npn transistor BUL54A-TO5 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5977 issue 2 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min typ max unit s v cb = 1000v 10 i cbo collector-base cut-off current t c = 125c 100 i ceo collector-emitter cut- off current i b = 0 v ce = 500v 100 v eb = 9v 10 i ebo emitter-base cut-off current i c = 0 t c = 125c 100 a v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 500 v (br)cbo collector-base breakdown voltage i c = 100a 1000 v (br)ebo emitter-base breakdown voltage i e = 100a 10 i c = 100ma i b =20ma 0.05 0.1 i c = 0.5a i b =0.1a 0.15 0.2 v ce(sat) (1) collector-emitter saturation voltage i c = 1.0a i b = 0.2a 0.3 0.5 i c = 0.5a i b = 0.1a 0.8 1.0 v be(sat) (1) base-emitter saturation voltage i c = 1.0a i b = 0.2a 0.9 1.1 v i c = 0.1a v ce = 5v 20 50 i c = 0.5a v ce = 5v 12 15 i c = 1.0a v ce = 1.0v 5 8 h fe (1) forward-current transfer ratio t c = 125c 5 dynamic characteristics f t transition frequency i c = 0.2a v ce = 4v 20 mhz c obo output capacitance v cb = 20v f = 1.0mhz 20 pf notes notes notes notes (1) pulse width 300us, 2%
silicon power npn transistor BUL54A-TO5 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5977 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) 0.89 (0.035) max. 38.00 (1.5) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to-5 (to-205aa) pin 1 - emitter pin 2 - base pin 3 - collector
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